Method for forming bit line of flash device

Details Method for forming bit line of flash device Method for forming bit line of flash device

2005-11-15

2005-11-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S764000

Reexamination Certificate

active

06964921

ABSTRACT:
Disclosed herein is a method for forming a bit line of a flash device capable of reducing loss of an interlayer insulation film between the bit line patterns. The method includes forming a bit line metal hard-mask pattern prior to forming a bit line mask pattern, preventing an interval between the bit lines from being reduced by controlling conditions of a cleaning process prior to forming a metal film. The method obviates an additional process of removing the metal hard-mask film since the metal hard-mask film is also removed at the same time of carrying out a bit line planarization process.

REFERENCES:
patent: 6150073 (2000-11-01), Huang
patent: 6613647 (2003-09-01), Kim
patent: 2003/0205723 (2003-11-01), Hawley et al.
patent: 2004/0142557 (2004-07-01), Levy et al.
patent: 10-2001-0045400 (2001-06-01), None
patent: 10-2002-0083807 (2002-11-01), None

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