Method for forming bit line contact hole/contact structure

Details Method for forming bit line contact hole/contact structure Method for forming bit line contact hole/contact structure

2005-12-20

2005-12-20

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S723000

Reexamination Certificate

active

06977210

ABSTRACT:
Disclosed is a method for forming a bit line contact hole/contact structure. The method of the present invention includes steps of providing a substrate; forming a plurality of word line structures on the substrate; forming a doped dielectric layer on the substrate having the word line structures formed thereon; defining a position for forming a bit line contact hole; removing the doped dielectric layer other than the portion at the position for forming the bit line contact hole; forming a non-doped dielectric layer on the substrate having the word line structures and residual doped dielectric layer formed thereon; removing the residual doped dielectric layer by using an etchant with a high selectivity for doped dielectric layer
on-doped dielectric layer to form a bit line contact hole; and filling the bit line contact hole with conductive material to form a bit line contact structure.

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patent: 6033977 (2000-03-01), Gutsche et al.
patent: 6808984 (2004-10-01), Chen
patent: 6821872 (2004-11-01), Liao et al.
patent: 2003/0109124 (2003-06-01), Nakamura et al.
patent: 2003/0181007 (2003-09-01), Huang et al.
patent: 08046154 (1996-02-01), None
patent: 08130195 (1996-06-01), None
patent: 2000216242 (2000-08-01), None

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