Method for forming barrier metal layer of semiconductor device

Details Method for forming barrier metal layer of semiconductor device Method for forming barrier metal layer of semiconductor device

1998-05-20

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438659, 438627, H01L 2144

Patent

active

060339837

ABSTRACT:
A method for forming a barrier metal layer of semiconductor device is disclosed. According to the present invention, pre-cleaning, oxygen plasma treatment and formation of barrier metal layer are performed by in-situ type in one same conventional chamber. This method results in the reduction of cost and process time.

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