Method for forming barrier metal layer of bit line in...

Details Method for forming barrier metal layer of bit line in... Method for forming barrier metal layer of bit line in...

2011-08-09

2011-08-09

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S309000, C257S070000

Reexamination Certificate

active

07994558

ABSTRACT:
A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.

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patent: 10-2003-0049591 (2003-06-01), None
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Machine translation of Korean patent 2003-0049591 is attached.
Machine translation of Korea patent 1998-055960 is attached.
Notice of Preliminary Rejection from the Korean Intellectual Property Office, mailed Jul. 16, 2007 in Korean Patent Application No. 2005-0079535 and English translation thereof.

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