Method for forming barrier layer for copper metallization

Details Method for forming barrier layer for copper metallization Method for forming barrier layer for copper metallization

1999-01-07

2000-11-21

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438691, 438627, 438631, 438637, 438675, H01L 2144

Patent

active

061502707

ABSTRACT:
A method comprises forming a barrier layer for copper metallization, selectively forming a silicon film on a surface of copper wiring formed on the main surface of a semiconductor substrate, and reacting the silicon film with a non-copper metal and/or nitrogen to form a barrier layer in a self-aligned manner relative to the copper wiring. In the method, the capacitance increase in the copper wirings formed is prevented, and the barrier layer formed has a satisfactory barrier property of protecting the copper wirings.

REFERENCES:
patent: 4985750 (1991-01-01), Hoshino
patent: 5243222 (1993-09-01), Harper et al.
patent: 5677238 (1997-10-01), Gn et al.
patent: 5897375 (1999-04-01), Watts et al.
patent: 6037664 (2000-03-01), Zhao et al.
T. Takewaki et al., "A Novel Self-Aligned Surface-Silicide Passivation Technology for Reliability Enhancement in Copper Interconnects", Symposium on VLSI Technology Digest of Technical Papers, (1995) pp. 31-32.

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