Method for forming and growing a single crystal of a semiconduct

Details Method for forming and growing a single crystal of a semiconduct Method for forming and growing a single crystal of a semiconduct

1982-12-13

1985-06-04

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156616A, 156DIG73, C30B 1102

Patent

active

045212724

ABSTRACT:
A method for growing single crystal semiconductor compounds by the gradient freeze technique includes the process of reducing radiant heat flow while enhancing axial heat flow in the region of a seed crystal so as to give rise to an inverted solid-liquid interface together with a desired temperature profile.

REFERENCES:
patent: 3273969 (1966-09-01), Sirgo
patent: 3341302 (1967-09-01), Flanigen et al.
patent: 3393054 (1968-07-01), Rupprecht et al.
patent: 3514265 (1970-05-01), Pastore
patent: 3591340 (1971-07-01), Plaskett
patent: 3607137 (1971-09-01), Inoguchi
patent: 3615203 (1971-10-01), Kaneko
patent: 3759310 (1973-09-01), Barrow et al.
patent: 3853487 (1974-12-01), Meuleman et al.
patent: 3966881 (1976-06-01), Ayabe
patent: 4243471 (1981-01-01), Ciszek et al.
Plaskett et al., J. Electrochem. Soc. Solid State Science, 1/71, pp. 115-117.

Affiliated with

Also associated with

Rating

Method for forming and growing a single crystal of a semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming and growing a single crystal of a semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming and growing a single crystal of a semiconduct will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-827377