Method for forming an oxide film of a semiconductor

Details Method for forming an oxide film of a semiconductor Method for forming an oxide film of a semiconductor

1994-11-10

1995-11-28

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Base supplied constituent

4272481, 427255, 4272557, 4273977, 4274193, 437239, 437941, 437952, C23C 1640

Patent

active

054706114

ABSTRACT:
In a method for forming a compound oxide film such as a gate oxide film of a MOS device, after a first oxide film (such as a HTO film) is formed on a semiconductor substrate by deposition at a high temperature, a second oxide film is formed below the first oxide film by wet oxidizing the surface of the semiconductor substrate, which results in a compound oxide film consisting of the HTO film and the wet oxide film. Therefore, a high quality oxide film having excellent electrical characteristics can be formed.

REFERENCES:
patent: 5183783 (1993-02-01), Ohta et al.
Wolf et al, "Silicon Processing For The VLSI ERA, vol. 1: Process Technology", Lattice Press (1986) pp. 182-184 and 198-201.
Niwa et al, "SiO.sub.2 /Si Interfaces Studied by Scanning Tunneling Microscopy and high Resolution Transmission Electron Microscopy" J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 901-906.

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