Method for forming an opening for an interconnect structure...

Details Method for forming an opening for an interconnect structure... Method for forming an opening for an interconnect structure...

2006-10-24

2006-10-24

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S780000, C438S781000

Reexamination Certificate

active

07125793

ABSTRACT:
A method of forming an opening in a disclosed ILD is described. The ILD in one embodiment includes a matrix material and a photosensitive porogen. Hard sidewalls are formed in the ILD allowing a thin barrier layer to be used in a dual damascene copper and porous low-k without pore sealing steps.

REFERENCES:
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 2002/0030297 (2002-03-01), Gallagher et al.
patent: 2003/0004218 (2003-01-01), Allen et al.
MaMe surface characterization, “Low-K Dielectrics,” (undated), 2 pages, ITC irst, Centro Per La Ricerca Scientifica & Technologica.
Iawamoto, N. et al., “Studying Ultra Low K Dielectrics: Challenges and Solutions,” Jun. 2002, 21 pages, Honeywell/SEMATECH, Star Center, Electronic Materials, Ultra Low k Workshop.

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