Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-04-03
2000-08-29
Guay, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438604, 438605, 438660, 438662, 438931, H01L 213205
Patent
active
061108138
ABSTRACT:
A first metal film and a second metal film, both of which are made of Ni or the like, are deposited on the upper surface of a substrate made of SiC. In such a state, the interface between the first metal film and the substrate and the interface between the second metal film and the substrate both form a Schottky contact. Next, laser light is irradiated from above the upper surface of the substrate only onto the first metal film on the substrate after the diameter of the top end of the laser light has been reduced. Thus, since the metal-semiconductor interface between the first metal film and the substrate is turned into an alloy owing to the energy of the laser light without heating the entire substrate, an ohmic contact can be formed in the interface between the first metal film and the substrate. As a result, an ohmic electrode can be constituted by the first metal film.
REFERENCES:
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5124779 (1992-06-01), Furukawa et al.
patent: 5641975 (1997-06-01), Agarwal et al.
patent: 5976641 (1999-11-01), Onishi et al.
K. Fujimoto, et al., "A high performance GaAs MMIC transceiver for personal handy phone system (PHS)", Proceedings of 25.sup.th Europoean Microwave Conference, vol. 2, pp. 926-930, 1995.
C. Arnodo, et al. "Nickel and molybdenum ohmic contacts on silicon carbide", Institute of Physics Conference Series No. 142, pp. 577-580, 1996.
Kitabatake Makoto
Kumabuchi Yasuhito
Masato Hiroyuki
Ota Yorito
Chambliss Alonzo
Guay John
Matsushita Electric - Industrial Co., Ltd.
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