Method for forming an ohmic electrode

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438604, 438605, 438660, 438662, 438931, H01L 213205

Patent

active

061108138

ABSTRACT:
A first metal film and a second metal film, both of which are made of Ni or the like, are deposited on the upper surface of a substrate made of SiC. In such a state, the interface between the first metal film and the substrate and the interface between the second metal film and the substrate both form a Schottky contact. Next, laser light is irradiated from above the upper surface of the substrate only onto the first metal film on the substrate after the diameter of the top end of the laser light has been reduced. Thus, since the metal-semiconductor interface between the first metal film and the substrate is turned into an alloy owing to the energy of the laser light without heating the entire substrate, an ohmic contact can be formed in the interface between the first metal film and the substrate. As a result, an ohmic electrode can be constituted by the first metal film.

REFERENCES:
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5124779 (1992-06-01), Furukawa et al.
patent: 5641975 (1997-06-01), Agarwal et al.
patent: 5976641 (1999-11-01), Onishi et al.
K. Fujimoto, et al., "A high performance GaAs MMIC transceiver for personal handy phone system (PHS)", Proceedings of 25.sup.th Europoean Microwave Conference, vol. 2, pp. 926-930, 1995.
C. Arnodo, et al. "Nickel and molybdenum ohmic contacts on silicon carbide", Institute of Physics Conference Series No. 142, pp. 577-580, 1996.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming an ohmic electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming an ohmic electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming an ohmic electrode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1249340

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.