Method for forming an isolation region for electrically isolatin

Details Method for forming an isolation region for electrically isolatin Method for forming an isolation region for electrically isolatin

1983-11-07

1984-08-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148187, 156646, 156647, 156652, 156653, 156657, 156656, 1566591, 156662, 204192E, 252 791, 427 93, 29576W, 29580, C23F 102, C03C 1500, B44C 122, H01L 21306

Patent

active

044655320

ABSTRACT:
A method for forming an isolation region having a submicron width thereof in a semiconductor substrate includes the steps of forming a metal or a metal silicide layer on the semiconductor substrate then forming a resist layer on the metal or metal silicide layer and patterning the resist layer. The method further includes selectively etching the metal or metal silicide layer and the semiconductor substrate by the reactive ion etching process using a mixture of chlorine-containing gas and oxygen gas to form a groove in the surface portion of the semiconductor substrate located around the edge of the resist layer and forming an insulating layer in the groove.

REFERENCES:
patent: 4369565 (1983-01-01), Muramatsu
patent: 4373990 (1983-02-01), Porter

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