Method for forming an intermetal dielectric layer using...

Details Method for forming an intermetal dielectric layer using... Method for forming an intermetal dielectric layer using...

2005-12-23

2009-12-15

McCall-Shepard, Sonya D (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21252

Reexamination Certificate

active

07632755

ABSTRACT:
Disclosed are: (i) a method for forming an intermetal dielectric layer between metal wirings using a low-k dielectric material, and (ii) a semiconductor device with an intermetal dielectric layer comprising a low-k dielectric material. The method comprises the steps of: (a) forming a metal layer on a semiconductor substrate; (b) forming a plurality of metal wiring patterns by etching the metal layer selectively; (c) forming a first dielectric layer on the substrate and the plurality of metal wiring patterns; (d) forming a low-k dielectric layer on the first dielectric layer, the low-k dielectric layer having a lower dielectric constant than the first dielectric layer; and (e) forming a second dielectric layer on the low-k dielectric layer.

REFERENCES:
patent: 6136665 (2000-10-01), Ku et al.
patent: 7052932 (2006-05-01), Huang et al.
patent: 2005/0153519 (2005-07-01), Lu et al.

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