Method for forming an interconnection structure for ic...

Details Method for forming an interconnection structure for ic... Method for forming an interconnection structure for ic...

2007-11-06

2007-11-06

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S643000, C438S692000

Reexamination Certificate

active

10940147

ABSTRACT:
A method for forming an interconnection structure in an integrated circuit includes the following steps. A dielectric layer is formed on a semiconductor substrate. An opening is formed on the dielectric layer. A barrier layer is formed over inner walls of the opening and the dielectric layer. A conductive layer is deposited on the barrier layer and filling the opening. Then, a step of planarization is performed to form the interconnection structure, such that a peripheral edge of a top surface of the interconnection structure is no lower than a top surface of the barrier layer.

REFERENCES:
patent: 6100197 (2000-08-01), Hasegawa
patent: 6136680 (2000-10-01), Lai et al.
patent: 6376376 (2002-04-01), Lim et al.
patent: 6936542 (2005-08-01), Wojtczak et al.

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