Method for forming an interconnection in a semiconductor device

Details Method for forming an interconnection in a semiconductor device Method for forming an interconnection in a semiconductor device

1995-02-14

1996-06-04

Schilling, Richard L.

Etching a substrate: processes

Gas phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

1566431, 1566561, 148212, 4273833, 437228, C03C 1500, C03C 2506, B05D 302

Patent

active

055225209

ABSTRACT:
An interconnection in a semiconductor device is made of a conductive laminate including a Ti film, a TiN film and an aluminium alloy film consecutively formed on a SiO.sub.2 film grown on a Si substrate. A heat treatment of the conductive layer is performed at 450.degree.-600.degree. C. before plasma-etching to introduce nitrogen and oxygen atoms from TiN film and SiO.sub.2 film, respectively, into the Ti film. The nitrogen and oxygen atoms prevent the side-etching of the Ti film during a plasma etching of the laminate using a plasma containing chlorine atoms. An interconnection having a high reliability is obtained with a high productivity.

REFERENCES:
patent: 3585091 (1971-06-01), Lepselter

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