Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2007-07-24
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S392000, C257SE29266, C438S275000, C438S305000
Reexamination Certificate
active
11271933
ABSTRACT:
A method is disclosed for integrally forming at least one low voltage device and at least one high voltage device. According to the method, a first gate structure and a second gate structure are formed on a semiconductor substrate, wherein the first and second gate structures are isolated from one another. One or more first double diffused regions are formed adjacent to the first gate structure in the semiconductor substrate. One or more second double diffused regions are formed adjacent to the second gate structure in the semiconductor substrate. One or more first source/drain regions are formed within the first double diffused regions. One or more second source/drain regions are formed within the second double diffused regions. The first double diffused regions function as one or more lightly doped source/drain regions for the low voltage device.
REFERENCES:
patent: 5696400 (1997-12-01), Yoshida et al.
patent: 6759299 (2004-07-01), Lee et al.
patent: 6849489 (2005-02-01), Rabkin et al.
Chen Fu-Hsin
Chiang An-Min
Huang Wen-Hua
Lee Kuo-Ting
Wu You-Kuo
Kirkpatrick & Lockhart Preston Gates Ellis
Quach T. N.
Taiwan Semiconductor Manufacturing Co. Ltd.
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