Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-18
2000-11-07
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438637, 438673, 438713, H01L 214763
Patent
active
061436488
ABSTRACT:
A method for forming void free tungsten plug contacts (56a-56c) begins by etching a contact opening (55a-55c) using a C.sub.2 F.sub.6 and CHF.sub.3 chemistry. The etch chemistry is then changed to an O.sub.2 and CH.sub.3 F chemistry in order to insitu remove the contact photoresist while tapering an upper portion of the contact opening. A tungsten deposition process is then performed whereby the tapered portion of the contact reduces the effects of nonconformal and step-coverage-inconsistent tungsten deposition wherein voids in the contact are either substantially reduced or totally avoided within the contact structure. The reduction of or total elimination of voids (22) within the tungsten contact will increase yield, increase reliability, and reduce electromigration failures within integrated circuit devices.
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F.B.Kaufman, et al., "Chemical-Mechanical Polishing for Fabricating Paterned W Metal Features as Chip Interconnects", J. Electrochem. Soc., vol. 138, No. 11, Nov. 1991, pp. 3460-3464.
Klesat Heather Marie
Rodriguez Robert Arthur
Bowers Charles
Lee Hsien-Ming
Motorola Inc.
Rodriquez Robert A.
Witek Keith
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