Method for forming an infrared detector having a refractory meta

Details Method for forming an infrared detector having a refractory meta Method for forming an infrared detector having a refractory meta

1992-04-09

1993-02-23

Chadhuri, Olik

Fishing, trapping, and vermin destroying

437 5, 257442, 257290, H01L 3118

Patent

active

051889706

ABSTRACT:
Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.

REFERENCES:
patent: 4726885 (1988-02-01), Teherani et al.
patent: 4876222 (1989-10-01), Luttmer et al.
patent: 4910154 (1990-03-01), Zanio et al.
patent: 5036376 (1991-07-01), Teherani et al.

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