Method for forming an electrostatically force balanced silicon a

Details Method for forming an electrostatically force balanced silicon a Method for forming an electrostatically force balanced silicon a

1993-07-26

1996-04-02

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

7351429, 1566301, 1566331, 216 33, 437225, H01L 2100, B44C 122

Patent

active

055032850

ABSTRACT:
An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate by ion implantation and the formation of an oxide support layer below the proofmass, subsequently integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates; and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material where the hinge is structurally mounted to the substrates.

REFERENCES:
patent: 4614119 (1986-09-01), Zavracky et al.
patent: 5310450 (1994-05-01), Offenberg et al.
patent: 5389198 (1995-02-01), Koide et al.

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