Method for forming an electrode layer by a laser flow technique

Details Method for forming an electrode layer by a laser flow technique Method for forming an electrode layer by a laser flow technique

1990-03-16

1991-03-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156652, 156656, 1566591, 21912166, 357 67, 357 71, 437190, 437194, 437203, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

049975188

ABSTRACT:
A method for forming an electrode wiring by laser flowing a semiconductive wafer having an intermediate insulating film, a contact hole in the film and an Al alloy film serving as a wiring metal film and formed over the intermediate insulating film and the contact hole, which method comprises forming an anti-reflective film on the Al alloy film, irradiating individual IC chips on the semiconductive wafer with a laser beam in such a way that the beam size is larger than an IC chip size and the laser beam is irradiated on an adjacent IC chip in a subsequent irradiation cycle as superposed on a grid line of the semiconductive wafer which has been irradiated with the first laser beam irradiation at least partly, thereby causing the Al alloy film to be metal flow to fill the contact hole. The thus flown Al alloy film on which the anti-reflective film has been formed is subjected to patterning to form a wiring layer.

REFERENCES:
Laser Planarization, by David B. Tuckerman and Andrew H. Weisberg, Solid State Technology, Apr. 1986.

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