Method for forming an electrode

Details Method for forming an electrode Method for forming an electrode

2005-09-29

2008-03-18

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE25032

Reexamination Certificate

active

07344967

ABSTRACT:
In a semiconductor light-emitting device, a buffer layer, a un-doped GaN layer, a high carrier concentration n+-layer, an n-type layer, an emission layer, a p-type layer, and a p-type contact layer are deposited in sequence on a sapphire substrate. The semiconductor light-emitting device includes a light-transparent electrode made of indium tin oxide (ITO) which is deposited in the low pressure vacuum chamber flowing at least oxygen gas through electron beam deposition or ion plating treatment, and a thermal process is carried out.

REFERENCES:
patent: 4482216 (1984-11-01), Hashimoto et al.
patent: 5157540 (1992-10-01), Kidai et al.
patent: 6351068 (2002-02-01), Yamazaki et al.
patent: 2004/0206961 (2004-10-01), Yamada et al.
patent: 2006/0225614 (2006-10-01), Hagiwara et al.
patent: 11-040854 (1999-02-01), None
patent: 2001-210867 (2001-08-01), None
patent: 2003-17748 (2003-01-01), None
patent: 10-2004-0065503 (2004-07-01), None
Korean Office Action dated Jul. 26, 2004 (with partial English translation).

Affiliated with

Also associated with

Rating

Method for forming an electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming an electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming an electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3971583