Method for forming an electrical contact in an integrated circui

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430316, 430317, 430323, 156643, 156651, 156653, B44C 122

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046312480

ABSTRACT:
A contact (15) formed in accordance with the present invention includes rounded corners on the upper and lower surface and sloped walls in the dielectric material (10) in which the contact is formed. In one embodiment, a photolithographic mask is formed above the dielectric material (10) using photolithographic techniques well known in the art. Using reactive ion etching techniques, the contact is etched until a small portion of the dielectric material remains to be etched in the contact. The photolithographic mask is then removed. The contact is then completely etched using a reactive ion etching process. Using this technique, the contact formed has rounded upper edges.

REFERENCES:
patent: 4484979 (1984-11-01), Stocker
patent: 4522681 (1985-06-01), Gorowitz et al.
IBM Tech Disclosure Bulletin, vol. 23, No. 12, May 1981, Elimination of Reactive Ion Etching, Trench Induced Defects, Dau et al.
IBM Tech Disclosure Bulletin, vol. 19, No. 11, Apr., 1977, Clark Reactive Ion-Etch Process for Etched Sidewall Tailoring.
IBM Tech Disclosure Bulletin, vol. 21, No. 8, Jan. 1979, Silicon Grooves-Bottom Geometry Control, Burkhardt et al.

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