Method for forming AlGaN crystal layer

Details Method for forming AlGaN crystal layer Method for forming AlGaN crystal layer

2008-03-19

2009-12-15

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S492000, C257S077000, C257S190000, C257SE29104, C257SE21108

Reexamination Certificate

active

07632741

ABSTRACT:
There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.

REFERENCES:
patent: 2008/0054248 (2008-03-01), Chua et al.
Kida et al., “Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AIN as Underlying Layer”, Jpn. J. Appl. Phys, vol. 42 (2003), pp. 572-574 (w/Abstract).

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