Method for forming air gaps for advanced interconnect systems

Details Method for forming air gaps for advanced interconnect systems Method for forming air gaps for advanced interconnect systems

1997-12-31

2000-03-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438688, 438761, 438781, 438790, 438421, H01L 21764

Patent

active

060372494

ABSTRACT:
A process for forming air gaps in an interconnect system is disclosed. At least two conductive lines are formed upon a substrate. A low-dielectric constant material (LDCM) is formed between the at least two conductive lines. Formation of the LDCM creates first and second adhesive forces between the LDCM and the at least two conductive lines and between the LDCM and the substrate, respectively. The LDCM is expanded. A dielectric layer is formed onto the LDCM and the at least two conductive lines. Formation of the dielectric layer creates a third adhesive force between the LDCM and the dielectric layer. The LDCM is contracted. Contraction of the LDCM resulting from a fourth force within the LDCM. Each of the first, second, and third adhesive forces are substantially stronger than the fourth force.

REFERENCES:
patent: 5354387 (1994-10-01), Lee et al.
patent: 5548159 (1996-08-01), Jeng
Wolf, "Silicon Processing for the VLSI Era", vol. 1, pp. 191-194,1989.

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