Method for forming aerial metallic wiring on semiconductor...

Details Method for forming aerial metallic wiring on semiconductor... Method for forming aerial metallic wiring on semiconductor...

2005-07-12

2005-07-12

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S421000, C438S422000

Reexamination Certificate

active

06916735

ABSTRACT:
A temporary support layer2is formed on a semiconductor substrate1,and the temporary support layer2is provided with a hole4that reaches the semiconductor substrate1.The hole4is filled in with a conductor material5,and by pressurizing the conductor material5,the conductor material5and the semiconductor substrate1are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.

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patent: 4939101 (1990-07-01), Black et al.
patent: 5654226 (1997-08-01), Temple et al.
patent: 6089442 (2000-07-01), Ouchi et al.
patent: 6130110 (2000-10-01), Hashimoto
patent: 6432239 (2002-08-01), Mandai et al.
patent: 11-126820 (1999-05-01), None
patent: 2004-514313 (2004-05-01), None
patent: 2002-0037070 (2002-05-01), None
Webster's dictionary, Houghton Mifflin Company, 1995, p. 875.

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