Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-06-24
1998-06-02
Morris, Patricia L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438648, 438656, 438671, 438685, H05H 124
Patent
active
057599165
ABSTRACT:
A method for forming upon a semiconductor substrate a void free titanium nitride Anti-Reflective Coating (ARC) layer upon an aluminum containing conductor layer. There is first formed upon a semiconductor substrate an aluminum containing conductor layer. There is then formed upon the aluminum containing conductor layer a titanium rich titanium nitride layer which has a titanium:nitrogen molar ratio of greater than about 1.1:1. Finally, there is formed upon the titanium rich titanium nitride layer a substantially stoichiometric titanium nitride layer which has a titanium:nitrogen molar ratio of from about 1.0:1 to about 1.1:1. Optionally, a patterned photo resist layer may be formed upon the surface of the substantially stoichiometric titanium nitride layer and the substantially stoichiometric titanium nitride layer, the titanium rich titanium nitride layer and the aluminum containing conductor layer may be sequentially patterned.
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Fundamentals of Semiconductor Processing Technologies, Badih El-Karen, pp. 296-298, 1995.
Chen Li-Dum
Hsieh Shih-Huang
Hsu Te-Ming
Ackerman Stephen B.
Morris Patricia L.
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company Ltd
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