Method for forming a void-free monocrystalline epitaxial layer o

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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C30B 2504

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045577943

ABSTRACT:
A method for forming a layer of monocrystalline diamond cubic material on a mask comprises initially providing a substrate having a monocrystalline surface which is parallel to a {100}-type crystallographic plane. A mask is then formed on the substrate, the mask including at least two apertures and each aperture including an edge which is oriented between 8.degree. and 14.degree. from a particular <001> direction on the surface. The aperture edges are mutually parallel and in mutual opposition and the mask apertures each expose a monocrystalline surface portion of the substrate. The diamond cubic material is then epitaxially grown through the apertures and over the mask so as to form a monocrystalline layer of substantially uniform quality overlying the mask between the edges of the apertures.

REFERENCES:
patent: 3951694 (1976-04-01), Monfret
patent: 4522662 (1985-06-01), Bradbury et al.
"Growth Process of Silicon Over SiO.sub.2 by CVD: Epitaxial Lateral Overgrowth Technique", L. Jastrzebski et al., Journal of Electrochemical Society, vol. 130, No. 7, pp. 1571-1580, Jul. 1983.
"Defect Characterization in Monocrystalline Silicon Grown Over SiO.sub.2 ", J. T. McGinn et al., Journal of Electrochemical Society, vol. 131, No. 2, pp. 398-403, Feb. 1984.
"Growth Rate Anisotropy and Morphology of Autoepitaxial Silicon Films from SiCl.sub.4 ", C. H. J. Van Den Brekel, Journal of Crystal Growth, vol. 23, pp. 259-266, 1974.
International Publication No. WO81/02948, "Methods of Producing Sheets of Crystalline Material and Devices Made Therefrom", MIT, published Oct. 15, 1981.

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