Method for forming a VIA in an inter metal dielectric (IMD) cont

Details Method for forming a VIA in an inter metal dielectric (IMD) cont Method for forming a VIA in an inter metal dielectric (IMD) cont

1998-04-14

1999-12-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438640, 438632, 438624, 438780, 438790, 438673, H01L 21316

Patent

active

060017457

ABSTRACT:
The present invention relates to a method for forming a VIA in an Inter Metal Dielectric (IMD) containing Spin On Glass (SOG). The IMD is formed by 1) depositing a first silicon dioxide layer through a Chemical Vapor Deposition (CVD) process; 2) depositing a Spin On Glass (SOG) layer; and 3) depositing a second silicon dioxide layer through a Chemical Vapor Deposition process. Afterward, before the VIA is formed by an Inter Metal Dielectric (IMD) etching process, a selective ion implantation process is performed to densify the Spin On Glass(SOG) layer. By this arrangement, the outgassing effect of the Spin On Glass (SOG) during a subsequent metal deposition process can be therefore prevented.

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