Method for forming a V-shaped gate electrode in a semiconductor

Details Method for forming a V-shaped gate electrode in a semiconductor Method for forming a V-shaped gate electrode in a semiconductor

1997-04-04

1998-09-08

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438182, 438585, 438949, 438951, 430315, 430329, 430330, H01L 21338, H01L 213205, H01L 214763, G03C 500

Patent

active

058044744

ABSTRACT:
A method for forming a V-shaped gate electrode on a semiconductor substrate includes the following steps: A first gate opening is formed in a first resist between a source and a drain formed on a semiconductor substrate, and dummy openings are formed near both sides of the first gate opening. By baking the first resist, convex portions thereof which rise steeply are formed between the first gate opening and the dummy openings. A second resist is formed to overlay the first resist convex portions and the first gate opening. The second resist is removed from the first gate opening, and a second gate opening larger than the first gate opening is formed in the second resist above the first gate opening. Metal for the V-shaped gate electrode is deposited through the second gate opening on the sides of the first resist convex portions rising steeply from the bottom of the first gate opening. A lift-off technique is performed to leave the V-shaped gate electrode by dissolving the first resist convex portions and the second resist.

REFERENCES:
patent: 4253888 (1981-03-01), Kikuchi
patent: 4497684 (1985-02-01), Sebesta
patent: 5171718 (1992-12-01), Ishibashi et al.
patent: 5300403 (1994-04-01), Angelopolus et al.
patent: 5432125 (1995-07-01), Misawa et al.
patent: 5496779 (1996-03-01), Lee et al.
patent: 5583063 (1996-12-01), Samoto
patent: 5648198 (1997-07-01), Shibata

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