Method for forming a tungsten silicide layer in a semiconductor

Details Method for forming a tungsten silicide layer in a semiconductor Method for forming a tungsten silicide layer in a semiconductor

1996-05-28

1998-03-10

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438655, 438657, 438680, H01L 2128

Patent

active

057260966

ABSTRACT:
The present invention discloses a method for forming a tungsten silicide layer in a semiconductor device. A wafer to be deposited with a tungsten silicide layer is loaded into a chamber. The tungsten silicide layer is primarily deposited, thinner than desired in the device by a Chemical Vapor Deposition utilizing WF.sub.6 and SiH.sub.4 gases. The fluorine contained in the primarily deposited tungsten silicide layer is removed by introducing a large quantity of SiH.sub.4 gas into the chamber. Again the tungsten silicide layer is secondarily deposited, thinner than desired in the device, on the tungsten silicide layer from which the fluorine is removed and, thereafter, the fluorine contained in the secondarily deposited tungsten silicide layer is removed by introducing a large quantity of SiH.sub.4 gas. Such a process is repeated until the tungsten silicide layer of the thickness desired in the device is deposited. Accordingly, the present invention can increase the reliability of the semiconductor device by removing defect factors which appear during a later process as a result of fluorine ions contained in the tungsten silicide layer.

REFERENCES:
patent: 5231056 (1993-07-01), Gurtej
patent: 5364803 (1994-11-01), Lur et al.

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