Method for forming a tungsten plug and a barrier layer in a cont

Details Method for forming a tungsten plug and a barrier layer in a cont Method for forming a tungsten plug and a barrier layer in a cont

1998-07-15

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438644, 438668, 438675, 438629, H01L 2144, H01L 214763

Patent

active

059900040

ABSTRACT:
A method for forming a barrier layer inside a contact in a semiconductor wafer is disclosed herein. The forgoing semiconductor wafer includes a dielectric layer on a silicon contained layer. A portion of the silicon contained layer is exposed by the contact. The method mentioned above includes the following steps.
First, form a conductive layer on the topography of the semiconductor wafer by a method other than CVD to increase the ohmic contact to the exposed silicon contained layer. Thus a first portion of the conductive layer is formed on the dielectric layer, and a second portion of the conductive layer is formed on the exposed silicon contained layer. Next, remove the first portion of the conductive layer to expose the dielectric layer. Finally, use a chemical vapor deposition (CVD) method to form the barrier layer on the dielectric layer and the first portion of the conductive layer to prevent said silicon contained layer from exposure.

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