Method for forming a tungsten interconnect structure with...

Details Method for forming a tungsten interconnect structure with... Method for forming a tungsten interconnect structure with...

2006-06-13

2008-10-28

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

43, 43, 43, 43

Reexamination Certificate

active

07442638

ABSTRACT:
By performing a re-sputter process during the formation of a barrier layer for a contact opening in a tungsten-based process, the reliability of the tungsten deposition, as well as the performance of the resulting contact plug, may be enhanced. During the re-sputtering process, a thickness of the titanium-based barrier layer may be reduced at the contact bottom, while at the same time the material is re-condensed on critical lower sidewall portions of the contact opening.

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