Method for forming a trench isolation in a semiconductor device

Details Method for forming a trench isolation in a semiconductor device Method for forming a trench isolation in a semiconductor device

1998-09-25

2000-07-04

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438437, 148DIG50, H01L 2176

Patent

active

060838086

ABSTRACT:
A method for forming a trench isolation in a semiconductor device is provided in which a first heat treatment process is conducted on a thermal oxide layer previously formed in a trench at temperature range from about 1000.degree. C. to 1200.degree. C. for about 1 to 8 hours so as to remove defects in a semiconductor substrate and oxygen impurities within the semiconductor substrate resulting from a step of forming the trench in the semiconductor substrate. As a result, a subsequent second heat treatment process for densifying a trench filling material such as a CVD oxide layer can be performed at lower temperature of about 1000.degree. C. to 1050.degree. C., as compared with the temperature of the first annealing of the thermal oxide layer, thereby reducing distortions of the semiconductor substrate and reducing current leakages.

REFERENCES:
patent: 5478762 (1995-12-01), Chao
patent: 5665635 (1997-09-01), Kwon et al.
patent: 5741740 (1998-04-01), Jang et al.
patent: 5942858 (1996-02-01), Bose et al.
patent: 5985735 (1999-11-01), Moon et al.

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