Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-04-19
2011-04-19
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S300000, C438S305000, C438S528000, C257SE21431
Reexamination Certificate
active
07927989
ABSTRACT:
A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.
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Liu Ning
Moosa Mohamed S.
Zhang Da
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Hu Shouxiang
King Robert L.
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