Method for forming a titanium nitride layer

Details Method for forming a titanium nitride layer Method for forming a titanium nitride layer

2006-04-18

2006-04-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S306000

Reexamination Certificate

active

07030015

ABSTRACT:
A method for forming a titanium nitride layer. A pre-heating step is performed, wherein a substrate is placed in a chamber comprising inert gas with a pre-heating pressure between 0.1˜3 torr. A TiN deposition step is then performed, wherein the substrate is placed in a reactive gas at least comprising NH3and TiCl4, and the first TiN deposition step has a reactive pressure of more than 5 torr and a reactive temperature of more than 500° C.

REFERENCES:
patent: 2005/0089634 (2005-04-01), Otsuki

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