Method for forming a titanium nitride layer

Details Method for forming a titanium nitride layer Method for forming a titanium nitride layer

2005-05-17

2005-05-17

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S256000, C438S399000, C257S300000, C257S306000

Reexamination Certificate

active

06893963

ABSTRACT:
A method for forming a titanium nitride layer. The method includes the steps of exposing a semiconductor substrate to a reactive gas containing TiCl4and NH3for a first deposition to form a layer of titanium nitride on the substrate, at reaction pressure less than 1 torr and temperature less than 500° C.; placing the semiconductor substrate in NH3gas for a first annealing step, at pressure between 1 and 3 torr; exposing the semiconductor substrate to a reactive gas comprising TiCl4and NH3for a second deposition, at pressure exceeding 5 torr and temperature exceeding 500° C.; and subjecting the semiconductor substrate to a second annealing step in NH3gas, at pressure exceeding 5 torr.

REFERENCES:
patent: 5994181 (1999-11-01), Hsieh et al.
patent: 6207557 (2001-03-01), Lee et al.
patent: 483141 (2002-04-01), None

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