Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-03-26
2011-10-18
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S667000, C438S689000, C438S701000, C257SE21597
Reexamination Certificate
active
08039386
ABSTRACT:
A method of forming a through silicon via includes forming a via opening in a substrate using a hard mask, wherein a polymer is formed in the via opening. A first wet clean removes a first portion of the polymer and forms a first carbon containing oxide along portions of the sidewalls. A first ash process modifies the first carbon containing oxide and removes a second portion of the polymer. A first wet etch removes the modified first carbon containing oxide and a third portion of the polymer. A second ash process forms a second carbon containing oxide along at least a portion of the sidewalls. A second wet etch process removes the second carbon containing oxide and a fourth portions of the polymer. A third ash process forms a third carbon containing oxide along portions of the sidewalls and removes any remaining portions of the polymer.
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Dao Thuy B.
Noble Ross E.
Triyoso Dina H.
Chiu Joanna G.
Freescale Semiconductor Inc.
Trinh Michael
Vo Kim-Marie
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