Method for forming a thin semiconductor film and a plasma CVD ap

Details Method for forming a thin semiconductor film and a plasma CVD ap Method for forming a thin semiconductor film and a plasma CVD ap

1997-01-10

2000-01-04

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723R, 156345, C23C 1600

Patent

active

060098287

ABSTRACT:
A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.

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