Method for forming a thin film transistor using an electrostatic

Details Method for forming a thin film transistor using an electrostatic Method for forming a thin film transistor using an electrostatic

1997-06-10

1999-05-04

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438928, H01L 2100, H01L 2360

Patent

active

058997083

ABSTRACT:
In manufacturing a semiconductor device on a glass substrate, a conductive thin-film (for instance, a conductivity-imparted silicon film) is formed on the bottom surface side of the glass substrate at the initial stage of a manufacturing process. Since the conductive thin film serves as an electrostatic shield, the glass substrate is prevented from being electrified directly, whereby electrostatic breakdown of device elements as would otherwise be caused by electrification of the glass substrate can be avoided.

REFERENCES:
patent: 4608095 (1986-08-01), Hill
patent: 4608096 (1986-08-01), Hill
patent: 4824698 (1989-04-01), Jastrzebski et al.
patent: 5189508 (1993-02-01), Tachimori et al.
patent: 5219771 (1993-06-01), Miyake
patent: 5360748 (1994-11-01), Nadahara et al.
patent: 5374842 (1994-12-01), Kusakabe
patent: 5397903 (1995-03-01), Hirose
patent: 5419786 (1995-05-01), Kokawa et al.
patent: 5443661 (1995-08-01), Oguro et al.
patent: 5466622 (1995-11-01), Cappelletti
patent: 5506155 (1996-04-01), Kaigawa
patent: 5516706 (1996-05-01), Kusakabe
patent: 5534294 (1996-07-01), Kubota et al.
patent: 5605602 (1997-02-01), DeBusk
patent: 5698942 (1997-12-01), Greene et al.
patent: 5721145 (1998-02-01), Kusakabe et al.

Affiliated with

Also associated with

Rating

Method for forming a thin film transistor using an electrostatic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a thin film transistor using an electrostatic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a thin film transistor using an electrostatic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1865123