Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-05-10
2005-05-10
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S150000
Reexamination Certificate
active
06890803
ABSTRACT:
A method for forming a thin film transistor of an organic light emitting display includes depositing a first metal layer on a substrate, performing a photo-etching-process (PEP) to form a gate of the TFT on the substrate, forming a gate insulating layer, a microcrystalline silicon layer, an amorphous silicon layer, and a doped n+layer sequentially, and then performing a second PEP to remove a portion of the doped n+layer, the amorphous silicon layer, and the microcrystalline silicon layer. The method further includes forming a second metal layer, performing a third PEP to form a source and a drain on the substrate and to simultaneously remove a portion of the doped n+layer to expose the amorphous silicon layer, and finally, forming a passivation layer on the substrate.
REFERENCES:
patent: 5311040 (1994-05-01), Hiramatsu et al.
patent: 6674502 (2004-01-01), Terakado et al.
patent: 6731364 (2004-05-01), Takahashi et al.
patent: 20040119072 (2004-06-01), Lee et al.
Lai Han-Chung
Lin Han-Tu
AU Optronics Corp.
Hsu Winston
Nguyen Thanh
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