Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-26
1999-02-09
Booth, Richard A.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438158, 438163, 438970, H01L 2184
Patent
active
058693602
ABSTRACT:
A method for forming a field effect transistor which includes providing a substrate having thin film source and drain regions formed thereon; forming a thin film channel region intermediate the thin film source and drain regions, the thin film channel region comprising a first layer of semiconductor material, an etch stop layer formed over the first layer semiconductor material, and a second layer of material formed over the etch stop layer; forming a masking layer over the source and drain regions while leaving the thin film channel region effectively exposed; and removing a portion of the second layer of material selectively relative to the etch stop layer in the exposed thin film channel region.
REFERENCES:
patent: 5166084 (1992-11-01), Pfiester
patent: 5350698 (1994-09-01), Huang et al.
patent: 5366909 (1994-11-01), Song et al.
patent: 5403755 (1995-04-01), Chae
patent: 5510278 (1996-04-01), Nguyen et al.
patent: 5670399 (1997-09-01), Manning et al.
"Field-Induction-Drain (FID) Poly-Si TFTs with High On/Off Current Ratio," Keiji Tanaka, Kenji Nakazawa, Shiro Suyama, Kinya Kato, Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 1011-1014.
"Leakage Currents Reduction of Poly-Si TFT's by Two Step Annealing," T. Aoyama, Y. Mochizuki, G. Kawachi, S. Oikawa, and K. Miyata, Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 389-392.
"High-definition displays and technology trends in TFT-LCDs," 1-Wei Wu, Journal of the SID, Feb. 1, 1994.
Abbott Todd R.
Batra Shubneesh
Manning Monte
Booth Richard A.
Micro)n Technology, Inc.
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