Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-02-11
1998-11-10
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427554, 427527, 4272557, 438160, 438166, 438488, B05D 306, H01L 29786
Patent
active
058340718
ABSTRACT:
Method for forming a polycrystalline silicon (ploy-Si) film of a semiconductor device includes forming the gate electrode on a substrate and depositing a dielectric layer on the substrate and the conductive layer. Then a first layer (microcrystalline silicon:.mu.c-Si) is formed on the dielectric layer and a second layer (hydrogenated amorphous silicon:a-Si:H) is deposited on the first layer. Noted that the polycrystalline silicon (poly-Si) can be fabricated by applying the laser annealing to the first layer and the second layer to transform them to poly-Si. Annealing the first layer and the second layer by laser, followed by fabricating the source and drain electrodes, thus the TFT with good electrical characteristics is fabricated.
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Industrial Technology Research Institute
King Roy V.
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