Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Insulative housing or support
Reexamination Certificate
2006-01-10
2006-01-10
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Insulative housing or support
C438S126000, C438S127000, C428S069000
Reexamination Certificate
active
06984546
ABSTRACT:
A method is to form a thin film light emitting device. The method includes providing a transparent substrate. A transparent anode layer, a light emitting layer, a metal cathode layer are sequentially formed on the transparent substrate. A sealant layer is formed to at least cover the light emitting layer and the metal cathode layer. A covering layer having a covering surface is provided. An evaporation process is performed to form an active absorption layer on the covering surface of the covering layer. The covering surface of the covering layer covers on a portion of the sealant layer above the metal cathode layer. The covering layer can have a recess region that is to be formed the active absorption layer thereon. Alternatively, the active absorption layer can be evaporated before the sealant is formed. Moreover, the active absorption layer can be replaced with an insulating layer.
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patent: 2002/0033664 (2002-03-01), Kobayashi
Chen Yung-Yuan
Cheng Chen Lai
Chou Yi-Hung
Fen Tseng Chiu
Pai Jui-Fen
Delta Optoelectronics, Inc.
Duong Khanh
J.C. Patents
Wilczewski Mary
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