Method for forming a thin film light emitting device

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Insulative housing or support

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S126000, C438S127000, C428S069000

Reexamination Certificate

active

06984546

ABSTRACT:
A method is to form a thin film light emitting device. The method includes providing a transparent substrate. A transparent anode layer, a light emitting layer, a metal cathode layer are sequentially formed on the transparent substrate. A sealant layer is formed to at least cover the light emitting layer and the metal cathode layer. A covering layer having a covering surface is provided. An evaporation process is performed to form an active absorption layer on the covering surface of the covering layer. The covering surface of the covering layer covers on a portion of the sealant layer above the metal cathode layer. The covering layer can have a recess region that is to be formed the active absorption layer thereon. Alternatively, the active absorption layer can be evaporated before the sealant is formed. Moreover, the active absorption layer can be replaced with an insulating layer.

REFERENCES:
patent: 6175186 (2001-01-01), Matsuura et al.
patent: 6284342 (2001-09-01), Ebisawa et al.
patent: 6285039 (2001-09-01), Kobori et al.
patent: 6468819 (2002-10-01), Kim et al.
patent: 6538375 (2003-03-01), Duggal et al.
patent: 6724150 (2004-04-01), Maruyama et al.
patent: 2002/0033664 (2002-03-01), Kobayashi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming a thin film light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a thin film light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a thin film light emitting device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3528279

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.