Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1999-08-17
2000-07-04
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429807, 20429811, 20429821, 20429828, 118723VE, 118723R, C23C 1434
Patent
active
060833653
ABSTRACT:
The film-forming apparatus includes a gas introduction tube for introducing an inert gas into a vacuum chamber, a vapor source and a target, and forms thin film by depositing sputtered particles and evaporated particles on the surface of a substrate, the sputtered particles being liberated by sputtering the target using ion energy of plasma generated around the target while the evaporated particles being obtained by evaporating a vapor source by heating and ionizing evaporated components using the plasma. This apparatus includes a substrate holder for holding the substrate so that its film-forming surface faces the side wall of the vacuum chamber; a rotating table for rotating the substrate holder within the vacuum chamber; a target arranged in the side wall of the vacuum chamber so that its sputtering surface faces the inside of the vacuum chamber; a shield detachably fitted in a through hole formed approximately through the center of the target and having a hollow space therein; a gas introduction tube for introducing the inert gas into the hollow space of the shield; and a vapor source provided in the hollow space near the gas exit of the gas introduction tube. This apparatus is employed in the film-forming method of the present invention.
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Kitabatake Akihiro
Yamada Keiji
Chacko-Davis Daborah
Nguyen Nam
Sanyo Vacuum Industries Co. Ltd.
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