Method for forming a tapered opening in silicon

Details Method for forming a tapered opening in silicon Method for forming a tapered opening in silicon

1996-07-26

1997-07-29

Niebling, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566621, 437981, H01L 21306

Patent

active

056518587

ABSTRACT:
A method for forming a tapered opening in a silicon substrate uses NF.sub.3 and HBr. The NF.sub.3 /HBr plasma etch allows both a good taper profile, 85.degree. to 60.degree., as well as a good etch rate, approximately 2500 to 3000 .ANG./minute. Although not limited to a particular trench size, the present method is well suited for forming openings smaller than 0.45 .mu.m.

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