Method for forming a (TaO) 1-x (TiO) x N dielectric layer in...

Details Method for forming a (TaO) 1-x (TiO) x N dielectric layer in... Method for forming a (TaO) 1-x (TiO) x N dielectric layer in...

2008-05-13

2008-05-13

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S785000, C257SE21625

Reexamination Certificate

active

11101424

ABSTRACT:
The present invention provides a method for forming an improved dielectric layer for semiconductor devices such as gate structures and capacitors. The method utilizes a layer of (TaO)1-x(TiO)xN (x defined herein) as a substitute for SiO2, together with one or more additional procedures to minimize or prevent channel leakage and other problems that can minimize the performance of the structure.

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patent: 2358283 (2001-07-01), None
patent: 11-163322 (1999-06-01), None
patent: 2000-200842 (2000-07-01), None

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