Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-01-21
1999-10-05
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438396, 438255, H01L 2120
Patent
active
059638150
ABSTRACT:
An amorphous silicon conductive film on a semiconductor wafer is treated with hydrofluoric acid to remove a natural oxide film therefrom, and then a very thin oxide film is formed on the semiconductor wafer. Thereafter, a silane gas is used to form a nucleating film, followed by annealing to cause the surface of the conductive film be roughened. The very thin oxide film is formed in a thickness of 0.5 angstroms to 20 angstroms. The very thin oxide film is alternatively formed either by treatment with an aqueous hydrofluoric acid solution or by flushing treatment. Thus, a roughened surface having a satisfactory roughness is uniformly formed on the surface of a conductive film on a semiconductor wafer.
REFERENCES:
patent: 5811344 (1998-09-01), Tu et al.
Hanaoka Kenichi
Nakajima Shigeki
Ohnishi Hiroshi
Okamoto Yoshihiko
Tsuchimoto Junichi
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Tuan H.
Ryoden Semiconductor System Engineering Corporation
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