Method for forming a submicron resist pattern

Details Method for forming a submicron resist pattern Method for forming a submicron resist pattern

1994-02-23

1996-06-11

Wright, Lee C.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566551, 15665911, 430313, 430314, 430315, 430316, 430317, 430323, 430324, 430327, G03F 738, G03F 730

Patent

active

055251927

ABSTRACT:
This invention relates to a method for forming a submicron pattern of a resist using a silylation process which can improve resolution and a side wall profile of the resist. The method comprises the steps for coating a photo resist film on a silicon substrate, forming a primary insoluble layer by a surface treatment of the coated resist film with alkali solution, forming a latent image pattern on an exposed part of the resist film by exposing the resist film using a mask for exposure, forming a surface step with the non-exposed resist film by carrying out a selective etching of the exposed resist film to a certain thickness, forming a silylation layer on the surface of the exposed and etched resist film by carrying out a silylation process, removing the non-exposed resist film by etching, and forming a resist pattern by removing the silylation layer.

REFERENCES:
patent: 4452881 (1984-06-01), Augstein et al.
patent: 4803181 (1989-02-01), Buchmann et al.
patent: 4882008 (1989-11-01), Garza et al.
patent: 4978594 (1990-12-01), Bruce et al.
patent: 5094936 (1992-03-01), Misium et al.
patent: 5262282 (1993-11-01), Hieda et al.
patent: 5322764 (1994-06-01), Kamiyama et al.

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