Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2005-05-06
2008-11-25
Menz, Douglas M. (Department: 2891)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S361000, C438S342000, C257S586000, C257S593000, C257SE21445
Reexamination Certificate
active
07456071
ABSTRACT:
An integrated circuit including a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, in which the median portion of this buried layer is filled with a metal-type material.
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Coronel Philippe
Leverd François
Marty Michel
Fulk Steven J.
Jorgenson Lisa K.
Menz Douglas M.
Morris James H.
STMicroelectronics S.A.
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