Method for forming a stacked structure capacitor in a semiconduc

Details Method for forming a stacked structure capacitor in a semiconduc Method for forming a stacked structure capacitor in a semiconduc

1997-02-28

2000-08-15

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438255, 438396, 438964, 257306, 257309, H01L 218242, H01L 2120

Patent

active

061035874

ABSTRACT:
In a method for forming in a semiconductor device a stacked structure capacitor having a lower capacitor plate and an upper capacitor plate sandwiching a dielectric film therebetween, after a first conducting film, which becomes the lower capacitor plate, is formed, ionized clusters are implanted or impacted to a surface of the first conducting film. Thereafter, cluster-implanted regions are selectively removed from the surface of the first conducting film to resultantly roughen the surface of the first conducting film. Then, a dielectric film is formed on the roughened surface of the first conducting film, and a second conducting film, which becomes the upper capacitor plate, is formed on the dielectric film.

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patent: 5863826 (1999-01-01), Wu et al.
Takeuchi et al., "Shallow Implantation By Gas Source ICB Technique", Technical Report of IEICE, pp. 97-104, (1994).
HSIEH et al., "Molecular-Dynamics Simulations Of Collisions Between Energetic Clusters Of Atoms And Metal Substrates", Physical Review B, vol. 45(8):4417-4430, (1992).

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