Method for forming a spacer with a prograde profile

Details Method for forming a spacer with a prograde profile Method for forming a spacer with a prograde profile

1995-12-21

1997-05-20

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Utilizing reflow

438763, 438789, 438790, 438978, H01L 2128, H01L 2144

Patent

active

056311745

ABSTRACT:
A method for forming spacers having a prograde profile includes providing a semiconductor substrate having raised structures thereon having top and lateral surfaces. A layer of spacer material is then deposited conformably over the raised objects and the semiconductor substrate. A layer of compatible material having a lower viscosity at high temperature than the spacer material is then deposited conformably over the layer of spacer material. The layer of compatible material is then reflowed. The portions of the layer of spacer material and the layer of compatible material laterally enclosing the raised structures constitute spacers. The layer of compatible material is reflowed sufficiently to result in spacers having a prograde profile, i.e., to result in laterally outward facing surfaces of the spacers that slope laterally outward from the top surfaces of the raised objects downward.

REFERENCES:
patent: 4752591 (1988-06-01), Beitman
patent: 4818335 (1989-04-01), Karnett
patent: 4872947 (1989-10-01), Wang et al.
patent: 4935380 (1990-06-01), Okumura
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5428240 (1995-06-01), Lur
patent: 5449640 (1995-09-01), Hunt et al.
patent: 5464480 (1995-11-01), Matthews
El-Kareh, Badih "Fundamentals of Semiconductor Processing Technology", Boston, (1995) pp. 117-120.

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