Method for forming a soft magnetic nitride layer on a magnetic h

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20419215, 20419223, C23C 1434

Patent

active

054297311

ABSTRACT:
The present invention relates to a method for forming a layer of isotropic soft magnetic nitride alloy even by means of mass-production apparatus wherein a target size is large in comparison to a distance between a substrate and a target, by using a bias sputtering method wherein a negative bias voltage is continuously applied to a substrate and sputtering is carried out in Ar atmosphere mixed with nitrogen gas or periodically mixed with nitrogen gas. Furthermore, the present invention may include a heat treatment of the soft magnetic nitride alloy layer deposited on the substrate in a temperature of more than 300.degree..degree.C. to less than 800.degree. C. to improve a soft magnetic characteristic.

REFERENCES:
patent: 4231816 (1980-11-01), Cuomo et al.
patent: 4640755 (1987-02-01), Sato
patent: 4663193 (1987-05-01), Endo et al.
patent: 4816127 (1989-03-01), Eltoukhy
patent: 4865709 (1989-09-01), Nakagawa et al.
patent: 4904543 (1990-02-01), Sakakima et al.
patent: 5004652 (1991-04-01), Lal et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming a soft magnetic nitride layer on a magnetic h does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a soft magnetic nitride layer on a magnetic h, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a soft magnetic nitride layer on a magnetic h will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-758134

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.